P-Type Si + SiO2 wafer–Silicon thermal oxide wafer (4 Inch), Heavily Doped

Name: P-Type Si + SiO2 wafer--Silicon thermal oxide wafer (4 Inch), Heavily Doped
SKU: 2469
Availability: InStock

₹3518

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Prime Grade, P-Type Si + SiO2 wafer–Silicon thermal oxide wafers.
Price/wafer 3350+5%GST = 3517.50 INR
HSN: 38180010
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Category: Silicon wafer Tags: 4 inch oxidized silicon wafer P-type, doped silicon substrate with thermal oxide layer, heavily doped silicon wafer for electronics, high quality P-type silicon wafer for lab use, P-Type silicon wafer 4 inch, semiconductor grade silicon wafer with oxide layer, Si SiO2 wafer for semiconductor research, silicon thermal oxide wafer heavily doped, SiO2 coated silicon wafer 4 inch P-type, thermal oxide silicon wafer for MEMS fabrication

Description
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Description

Grade Prime
Mono-crystalline
Diameter: 4 inch
Orientation: <100>
Type: P (Boron Doped)
Thickness: 525 Micron
Resistivity: 0.001-0.005 Ohm cm
SiO2 layer Thickness: 300nm
Single Side Polished

To read more about Silicon wafers please visit the link below:
https://www.vritratech.com/si.html

Additional information

Weight	0.4 kg
Dimensions	19.5 × 11.5 × 9.5 cm

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P-Type Si + SiO2 wafer–Silicon thermal oxide wafer (4 Inch), Heavily Doped

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